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New Low
Noise Wide-band Amplifiers
Released
May 2010 |
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MLA-01122B
MLA-0522A
MLA-0522A-87
MLA-06183A
To see all
Low Noise Wide-band Amplifiers in production, please click here.
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New Low Noise pHEMT Devices
Released
May 2010 |
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MwT-LN180
MwT-LN240
MwT-LN300
MwT-LN600
To see all
Low Noise pHEMT Devices in production, please click here. |
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New HBT
Amplifiers
Released
March 2009 |
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Broadband cascadable Dual
Matched MMIC amplifier utilizing high-reliability InGaP/GaAs HBT
technology.
MHA-051023D-88
MHA-054020-89
To see all
WiMax GaN based RF Power Amplifiers in production, please click here.
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New WiMax GaN based RF Power
Amplifiers
Released
January 2009 |
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High linearity
and high efficiency RF power amplifier products with output power up to
10 watts, based on advanced high reliability GaN device technology.
MGA-242740-02
MGA-333840-02
MGA-495940-02
To see all
WiMax GaN based RF Power Amplifiers in production, please click here.
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New MMIC
Amplifiers
Announced
May/June 2008 |
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Medium gain and
medium power amplifiers realized in advanced GaAs pHEMT with on-chip
via-hole grounding technology.
To see all
MMIC amplifiers in production, please click here.
To see all
MMIC amplifiers in development, please click here.
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New MESFET Chips
Released November 2005 |
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MwT-22
MwT-25
To see all
MESFET Chips, please click here.
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New
Leadless Chip Carrier (-02 package)
Released
October
2005 |
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Low cost, high linearity designed for
commercial 2G, 2.5G, 3G, GSM, TDMA, EDGE, UMTS, WCDMA, CDMA2000, and TD-SCDMA
applications.
To see all
wireless products offered in the LCC package, please click here.
To see all WiMax
products offered in the LCC package, please click here.
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New
Broadband General Purpose Amplifiers
Released
October
2005 |
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MwT’s two new “amplifiers
MPS-032701A-82 and
MPS-0425A9D-82" are ideally
suited for those applications that require medium power, high-gain, and
high linearity. The
MPS-032701A-82 operates from 300 MHz to 2700 MHz and
the MPS-0425A9D-82 operates from 400 MHz to 2500 MHz.
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New SOT89 and QFN Low Cost Package
Released
April
2005 |
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New WiMax Power Amplifier
Released
March
2005 |
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The
WPS-495922-02
operates over 4.9 to 5.9GHz band with 11dB gain and 32dBm output power at
1dB compression point. Based on MwT’s proprietary high linearity MESFET
technology, the Power Amplifier achieves superior Error Vector Magnitude (EVM)
performance of 2.5% at 26dBm output power level under WiMax test signal (256
carriers and 64 QAM with 2/3 coding factor). The EVM performance also
includes 1.6% of accumulated errors from the modulator and driver stages.
The adjacent channel power ratio, ACPR, is less than –40dBc at 25dBm average
output power and the third-order intercept point, IP3, is as high as 47dBm
at 22dBm output power per tone.
WPS-495922-02 is pre-matched to 50 Ohms for
easy cascade. The PA is biased at 7.5V drain voltage and about 600mA direct
current. The
WPS-495922-02 is packaged in MwT 02 package, a low cost surface
mount LLC package. The package is lead free and has a proprietary copper
alloy based pallet for good thermal conductivity.
Click here for our
complete line of WiMax Power Amplifiers.
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New
Power pHEMT
Chips Released June 2004 |
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The MwT Power pHEMT AlGaAs/InGaAs
pHEMT (Pseudomorphic-High-Electron-Mobility-Transistor) devices,
MwT-PH7,
MwT-PH15,
MwT-PH16 are ideally suited
for applications requiring high-gain and medium power up to 28 GHz
frequency range. These devices are equally effective for either wideband
(e.g. 6 to 18 GHz) or narrow-band applications. The chips are produced
using MwT's reliable metal systems and all devices from each wafer are
screened to insure reliability. All chips are passivated using MwT's
patented "Diamond-Like Carbon" process for increased durability.
Click here
for more Power pHEMT Chips.
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New
Gunn Diodes
Released June 2004 |
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The
MwT-GK Gunn Diode is targeted at
CW and pulsed K-band (18-26.5 GHz) frequency source applications.
Typical Applications for this device include Motion Detection and
Surveillance, Microwave Transmitter and Receiver, Military Radar, Gunn Diode
Oscillators and Radar Detectors.
Click here for our complete line of
Gunn Diodes.
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New Balanced Amplifier Modules
Released June 2004 |
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MwT-0618
S/Z-H16P3
30.0 dBm Typ P1dB
6.0 dB Typ Small Signal Gain
1.7:1 Typ VSWR
37 dBm Typ IP3
MwT-0618 S/Z-H7P2
24.0 dBm Typ P1dB
9.5 dB Typ Small Signal Gain
1.7:1 Typ VSWR
33 dBm Typ IP3
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New High Linearity Driver
Amplifier
Released June 2004 |
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The
MPS-0425A9D-82 is a
high linearity modular amplifier designed to meet the ultra-linear
transmitter driver requirements for commercial AMPS, IS-54 and GSM base
stations. Key advantages are low intermodulation performance for
multi-carrier or wideband CDMA systems and exceptionally low input/output
return loss for ease of integration.
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New
General
Purpose Amplifier
Released June 2004 |
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The
MPS-002701-84 is an
internally matched GaAs FET amplifier in a surface mount ceramic package. It
is ideal for digital communications applications where excellent gain
linearity and high efficiency at a 5 Volt bias is required. The device may
be directly soldered to a 50 ohm microstrip circuit without additional
matching elements.
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New Distributed Amplifier Module |
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The MwT-0218 S/Z-7P1
amplifier module is an ideal building block for broadband(2-18 GHz), medium
power (+21 dBm) microwave assemblies and amplifiers. The miniature drop-in
design with low VSWR characteristics makes it convenient to integrate
mechanically and easy to cascade electrically. This module requires only a
single DC voltage. |
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New
Ultra Linear
Amplifiers |
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The ULA-808-82 and
ULA-818-82 are modular
amplifiers designed to meet the ultralinear transmitter output requirements
of worldwide wireless base station systems. The amplifiers exhibit an
extremely high IP3 (+48 dBm). The devices are self contained with all
matching and bias circuitry included. Typical applications for these devices
include driver stages for single channel and multicarrier feed forward
linear amplifiers. They are also useful for a lower power micro-cell
amplifier output stage where excellent multitone intermodulation performance
is required.
Some applications for the
ULA-818-82 device are:
CDMA, TDMA, GSM, GPRS, EDGE, cdma2000.
Some applications for the
ULA-808-82 device are: CDMA, TDMA, GSM, GPRS, EDGE, UMTS,
WCDMA, cdma2000, TD-SCDMA.
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A new range of competitively priced, ultra-linear driver amplifiers in three models
800 - 960 MHz,
1800 - 2000 MHz &
2100 - 2500 MHz. These RFIC devices
feature output powers of +24 P1 dBm but with IP3 of +42 dBm and better than 18 dB return
loss for simple circuit integration.Available
in our new 82 surface mount package, thermal performance is excellent, providing
exceptional reliability.
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