MwT GaAs Fet Selection Guide

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[Click to view PDF File] 2016-2017 Product Selection Guide
[Click to view PDF File] MwT Product Standard Lead Times
[Click to view PDF File] RoHS Compliance

[Click to view PDF File] ISO 9001:2008 Certificate
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APPLICATION NOTES AND SCREENING DOWNLOADS
[Click to view PDF File] MwT GaAs Device Technology.
[Click to view PDF File] Evaluation of the Effects of Hydrogen on MwT Fets.
[Click to view PDF File] Package Application Notes (70, 71, 73).  Some products also available in NEW SOT89 package.
[Click to view PDF File] Visual Level 1 Criteria - Commercial Applications.
[Click to view PDF File] Visual Level 3 Criteria - Military Standard Applications.
[Click to view PDF File] Device Handling Procedure, Idss Bin Selection Instructions, Idss Bin Accuracy.
[Click to view PDF File] MwT-LP7 Low Phase Noise Application Notes for DRO Applications
[Click to view PDF File] MwT Standard Wafer Evaluation Procedure
[Click to view PDF File] MwT-1789HL Application Note
[Click to view PDF File] MwT-1789LN Application Note
[Click to view PDF File] MwT-17Q3 Application Note
MTBF Plot For MwT GaAs Fets

GaAs FETs / pHEMTs DC Properties (Typical performance at 25C)
(RF Properties Listed On Page 1)

pHEMT MM-Wave Applications and Power pHEMT Devices:
The following are AlGaAs/InGaAs heterojunction pHEMT (Pseudomorphic High Electron Mobility Transistor) devices, best suited for mm-wave power and gain applications.
  Model Device Idss  Idss Range Gm Gm Vp Vp Bvgso Bvgso Bvgdo Bvgdo Vds Chip
    Type Range in Each Tested at   Tested at   Tested at   Tested at   Absolute Rth
      Min/Max Container Vds/Vgs Typ/Min Vds/Ids Typ/Max Igs Typ/Min Igd Typ/Min Max Typ
S-Parameter   mA mA V/V mS V/mA ( - V ) ( - mA ) ( - V ) ( - mA ) V/V V 0C/W
  MwT-PH4 pHEMT 18 / 66   2.5 / 0.0 56 / 36 3.0 / 1.0 1.2 / 2.5 0.4 12.0 / 6.0 0.4 12.0 / 8.0 7.0 210
  MwT-PH5 pHEMT 40 / 120 - 2.5 / 0.0 60 / 40 3.0 / 2.0 1.2 / 2.5 0.4 12.0 / 6.0 0.4 13.0 / 10.0 7.0 150
MwT-PH7 pHEMT 50 / 122 4 2.5 / 0.0 80 / 50 3.0 / 1.0 1.2 / 2.5 0.4 12.0 / 6.0 0.4 12.0 / 8.0 7.0 150
  MwT-PH8 pHEMT 240 / 600 20 2.5 / 0.0 320 / 240 3.0 / 8.0 1.2 / 2.5 1.2 12.0 / 6.0 1.2 13.0 / 10.0 8.0 40
  MwT-PH9 pHEMT 120 / 292 - 2.5 / 0.0 200 / 150 3.0 / 5.0 1.2 / 2.5 1.0 12.0 / 6.0 1.0 13.0 / 10.0 8.0 56
  MwT-PH11 pHEMT 440 / 800 - 2.0 / 0.0 800 / 450 3.0 / 16.0 1.2 / 2.5 2.4 12.0 / 6.0 2.4 13.0 / 10.0 8.0 24
MwT-PH15 pHEMT 120 / 240 10 2.5 / 0.0 200 / 130 3.0 / 2.0 1.2 / 2.5 1.0 12.0 / 6.0 1.0 13.0 / 10.0 8.0 65
MwT-PH16 pHEMT 150 / 360 15 2.5 / 0.0 280 / 180 3.0 / 3.0 1.2 / 2.5 1.0 12.0 / 6.0 1.0 13.0 / 10.0 8.0 45
  MwT-PH16A pHEMT 300 / 600 50 2.0 / 0.0 400 / 300 3.0 / 2.0 1.2 / 2.5 2.0 8.0 / 6.0 2.0 13.0 / 10.0 9.0 30

High-Power, High-Linearity Applications:
Ideal for commercial, military, hi-rel space applications.
  Model Device Idss  Idss Range Gm Gm Vp Vp Bvgso Bvgso Bvgdo Bvgdo Vds Chip
    Type Range in Each Tested at   Tested at   Tested at   Tested at   Absolute Rth
      Min/Max Container Vds/Vgs Typ/Min Vds/Ids Typ/Max Igs Typ/Min Igd Typ/Min Max Typ
S-Parameter   mA mA V/V mS V/mA ( - V ) ( - mA ) ( - V ) ( - mA ) V/V V 0C/W
  MwT-11 MESFET 240 / 920 40 2.5 / 0.0 380 / 290 3.0 / 16.0 2.0 / 5.0 2.4 12.0 / 8.0 2.4 12.0 / 8.0 8.0 28
  MwT-17Q3 MESFET 440 / 680 - 2.5 / 0.0 380 3.0 / 16.0 2.0 / 5.0 2.4 12.0 / 6.0 2.4 12.0 / 9.0 8.0 35
  MwT-22Q4 MESFET 800 / 1200 - 2.5 / 0.0 650 3.0 / 30.5 2.0 / 5.0 5.0 12.0 / 8.0 5.0 14.0 / 12.0 9.0 12

Broad-Band, Low Noise Figure:
Recommended for multi-octave applications where low noise figure is the driving parameter.
The MwT-A9 was designed for applications where both high gain and low noise figure are key specifications.
  Model Device Idss  Idss Range Gm Gm Vp Vp Bvgso Bvgso Bvgdo Bvgdo Vds Chip
    Type Range in Each Tested at   Tested at   Tested at   Tested at   Absolute Rth
      Min/Max Container Vds/Vgs Typ/Min Vds/Ids Typ/Max Igs Typ/Min Igd Typ/Min Max Typ
  S-Parameters   mA mA V/V mS V/mA ( - V ) ( - mA ) ( - V ) ( - mA ) V/V V 0C/W
MwT-4 MESFET 18 / 66 3 3.0 / 0.0 35 / 27 3.0 / 1.0 1.5 / 4.0 0.2 8.0 / 5.0 0.2 8.0 / 6.0 6.0 250
MwT-7   Nonlinear Model MESFET 26 / 98 4 3.0 / 0.0 45 / 36 3.0 / 1.0 1.5 / 4.5 0.4 8.0 / 5.0 0.4 8.0 / 6.0 6.0 180
MwT-LP7 MESFET 38 / 98 4 3.0 / 0.0 45 / 36 3.0 / 1.0 1.5 / 4.5 0.4 8.0 / 5.0 0.4 8.0 / 6.0 6.0 180
MwT-A9 MESFET 78 / 282 12 2.0 / 0.0 120 / 95 3.0 / 5.0 2.0 / 5.0 1.0 10.0 / 5.0 1.0 10.0 / 6.0 6.0 70
MwT-A989 MESFET 100 / 200 - 2.0 / 0.0 90 / 120 3.0 / 5.0 2.5 / 5.0 1.0 10.0 / 5.0 1.0 10.0 / 6.0 8.0 75
MwT-A989SB MESFET 100 / 200 - 2.0 / 0.0 90 / 120 3.0 / 5.0 2.5 / 5.0 1.0 10.0 / 5.0 1.0 10.0 / 6.0 8.0 75

Broad-Band, High Gain:
Recommended for multi-octave applications where maximum gain is the driving parameter.
  Model Device Idss  Idss Range Gm Gm Vp Vp Bvgso Bvgso Bvgdo Bvgdo Vds Chip
    Type Range in Each Tested at   Tested at   Tested at   Tested at   Absolute Rth
      Min/Max Container Vds/Vgs Typ/Min Vds/Ids Typ/Max Igs Typ/Min Igd Typ/Min Max Typ
S-Parameter   mA mA V/V mS V/mA ( - V ) ( - mA ) ( - V ) ( - mA ) V/V V 0C/W
MwT-1 MESFET 60 / 240 10 4.0 / 0.0 120 / 90 3.0 / 4.0 2.0 / 5.0 1.0 10.0 / 5.0 1.0 10.0 / 6.0 6.0 80
MwT-3 MESFET 30 / 120 5 4.0 / 0.0 55 / 35 3.0 / 2.0 2.0 / 5.0 0.2 12.0 /6.0 0.2 12.0 / 8.0 7.0 150
MwT-5 MESFET 30 / 110 5 2.0 / 0.0 40 / 23 3.0 / 0.0 2.0 / 4.5 0.4 8.0 / 5.0 0.4 10.0 / 7.0 6.5 150
MwT-7  Nonlinear Model MESFET 26 / 98 4 3.0 / 0.0 45 / 36 3.0 / 1.0 1.5 / 4.5 0.4 8.0 / 5.0 0.4 8.0 / 6.0 6.0 180

Broad-Band, Medium Power:
The following devices are recommended for multi-octave applications where optimum power output is the driving parameter.
  Model Device Idss  Idss Range Gm Gm Vp Vp Bvgso Bvgso Bvgdo Bvgdo Vds Chip
    Type Range in Each Tested at   Tested at   Tested at   Tested at   Absolute Rth
      Min/Max Container Vds/Vgs Typ/Min Vds/Ids Typ/Max Igs Typ/Min Igd Typ/Min Max Typ
S-Parameter   mA mA V/V mS V/mA ( - V ) ( - mA ) ( - V ) ( - mA ) V/V V 0C/W
MwT-1 MESFET 60 / 240 10 4.0 / 0.0 120 / 90 3.0 / 4.0 2.0 / 5.0 1.0 10.0 / 5.0 1.0 10.0 / 6.0 6.0 80
MwT-2 MESFET 60 / 240 10 4.0 / 0.0 100 / 75 3.0 / 4.0 2.0 / 5.0 0.4 12.0 / 6.0 0.4 12.0 / 8.0 7.0 80
MwT-3 MESFET 30 / 120 5 4.0 / 0.0 55 / 35 3.0 / 2.0 2.0 / 5.0 0.2 12.0 /6.0 0.2 12.0 / 8.0 7.0 150
MwT-6 MESFET 90 / 360 15 2.0 / 0.0 145 / 108 3.0 / 6.0 2.0 / 5.0 0.6 12.0 / 6.0 0.6 12.0 / 8.0 7.0 60
MwT-7  Nonlinear Model MESFET 26 / 98 4 3.0 / 0.0 45 / 36 3.0 / 1.0 1.5 / 4.5 0.4 8.0 / 5.0 0.4 8.0 / 6.0 6.0 180
MwT-8 MESFET 120 / 480 20 2.5 / 0.0 160 / 144 3.0 / 5.0 2.0 / 5.0 1.2 12.0 / 8.0 1.2 12.0 / 8.0 7.5 45
MwT-9 MESFET 78 / 282 12 2.0 / 0.0 120 / 95 3.0 / 5.0 2.0 / 5.0 0.5 12.0 / 6.0 0.5 12.0 / 6.0 7.0 70
MwT-15 MESFET 60 / 240 10 4.0 / 0.0 100 / 75 3.0 / 4.0 2.0 / 5.0 0.4 12.0 / 6.0 0.4 12.0 / 8.0 7.0 80
MwT-16 MESFET 90 / 360 15 2.0 / 0.0 130 / 108 3.0 / 6.0 2.0 / 5.0 0.6 12.0 / 6.0 0.6 12.0 / 8.0 7.0 55
MwT-17  Nonlinear Model MESFET 240 / 920 40 2.0 / 0.0 380 / 290 3.0 / 6.0 2.5 / 5.0 1.6 12.0 / 6.0 1.6 12.0 / 8.0 7.0 33
MwT-1789 MESFET 440 / 680 - 2.5 / 0.0 380 3.0 / 16.0 2.0 / 5.0 2.4 12.0 / 6.0 2.4 12.0 / 9.0 8.0 35
MwT-1789SB MESFET 440 / 680 - 2.0 / 0.0 380 3.0 / 16.0 2.5 / 5.0 2.4 12.0 / 6.0 2.4 12.0 / 9.0 8.0 30

Narrow-Band Power Applications
Recommended for narrow-band applications where maximum power output and gain are the driving parameters.  These devices can be biased at 5 volts for wireless communications applications.
  Model Device Idss  Idss Range Gm Gm Vp Vp Bvgso Bvgso Bvgdo Bvgdo Vds Chip
    Type Range in Each Tested at   Tested at   Tested at   Tested at   Absolute Rth
      Min/Max Container Vds/Vgs Typ/Min Vds/Ids Typ/Max Igs Typ/Min Igd Typ/Min Max Typ
S-Parameter   mA mA V/V mS V/mA ( - V ) ( - mA ) ( - V ) ( - mA ) V/V V 0C/W
MwT-2 MESFET 60 / 240 10 4.0 / 0.0 100 / 75 3.0 / 4.0 2.0 / 5.0 0.4 12.0 / 6.0 0.4 12.0 / 8.0 7.0 80
MwT-3 MESFET 30 / 120 5 4.0 / 0.0 55 / 35 3.0 / 2.0 2.0 / 5.0 0.2 12.0 /6.0 0.2 12.0 / 8.0 7.0 150
MwT-6 MESFET 90 / 360 15 2.0 / 0.0 145 / 108 3.0 / 6.0 2.0 / 5.0 0.6 12.0 / 6.0 0.6 12.0 / 8.0 7.0 60
MwT-8 MESFET 120 / 480 20 2.5 / 0.0 160 / 144 3.0 / 5.0 2.0 / 5.0 1.2 12.0 / 8.0 1.2 12.0 / 8.0 7.5 45
MwT-9 MESFET 78 / 282 12 2.0 / 0.0 120 / 95 3.0 / 5.0 2.0 / 5.0 0.5 12.0 / 6.0 0.5 12.0 / 6.0 7.0 70
MwT-17  Nonlinear Model MESFET 240 / 920 40 2.0 / 0.0 380 / 290 3.0 / 6.0 2.5 / 5.0 1.6 12.0 / 6.0 1.6 12.0 / 8.0 7.0 33

Narrow-Band, Low Noise Applications
Recommended for narrow-band applications where low noise and gain are the driving parameters.  These devices can be biased at 5 volts for wireless communications applications.
  Model Device Idss  Idss Range Gm Gm Vp Vp Bvgso Bvgso Bvgdo Bvgdo Vds Chip
    Type Range in Each Tested at   Tested at   Tested at   Tested at   Absolute Rth
      Min/Max Container Vds/Vgs Typ/Min Vds/Ids Typ/Max Igs Typ/Min Igd Typ/Min Max Typ
S-Parameter   mA mA V/V mS V/mA ( - V ) ( - mA ) ( - V ) ( - mA ) V/V V 0C/W
MwT-1 MESFET 60 / 240 10 4.0 / 0.0 120 / 90 3.0 / 4.0 2.0 / 5.0 1.0 10.0 / 5.0 1.0 10.0 / 6.0 6.0 80
MwT-4 MESFET 18 / 66 3 3.0 / 0.0 35 / 27 3.0 / 1.0 1.5 / 4.0 0.2 8.0 / 5.0 0.2 8.0 / 6.0 6.0 250
MwT-A9 MESFET 78 / 282 12 2.0 / 0.0 120 / 95 3.0 / 5.0 2.0 / 5.0 1.0 10.0 / 5.0 1.0 10.0 / 6.0 6.0 70
MwT-A989 MESFET 100 / 200 - 2.0 / 0.0 90 / 120 3.0 / 5.0 2.5 / 5.0 1.0 10.0 / 5.0 1.0 10.0 / 6.0 8.0 75
MwT-A989SB MESFET 100 / 200 - 2.0 / 0.0 90 / 120 3.0 / 5.0 2.5 / 5.0 1.0 10.0 / 5.0 1.0 10.0 / 6.0 8.0 75

(RF Properties Listed On Page 1)

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