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APPLICATION NOTES AND SCREENING DOWNLOADS
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MwT GaAs Device
Technology.
MwT-7 Replaces
NEC710 Tech Note.
Evaluation of the
Effects of Hydrogen on MwT Fets.
Package Application Notes (70, 71, 73). Some products also available in NEW SOT89 package.
Visual Level 1 Criteria - Commercial Applications.
Visual Level 3 Criteria - Military Standard Applications.
Device Handling Procedure, Idss Bin Selection Instructions, Idss Bin Accuracy.
MwT-LP7 Low Phase Noise Application Notes for DRO Applications
MwT Standard Wafer Evaluation Procedure
MwT-1789HL Application Note
MwT-1789LN Application Note
MwT-17Q3 Application Note
MTBF Plot
For MwT GaAs Fets
Bias Application Note for MwT-LN180 and MwT-LN240
NEW
GaAs FETs / pHEMTs RF Properties
(Typical performance at 25°C)
(DC Properties Listed On Page 2)
-
Ultra Linear, High Dynamic Range, Low
Phase Noise
-
GaAs Process is Approved for Space
Applications with Proven Reliability
-
Commercial, Industrial, Military, and
Space Grade
-
100% Wafer Bond Pull, Die Shear, Wafer
DC Burn In, and Bake Tests in Evaluation per MIL-PRF-38534
-
100% Die Probe Test with Data Recorded
for Shipment
-
100% Visual Performed (Level 1, 3, or
4) before Shipment
-
100% Idss Match to Provide Performance
Consistency
-
RF Sample Test Capability Available
Upon Request
-
Standard and Custom Device
Specifications
-
High-Rel and Space-Rel Screening
Options Available
-
RoHS (lead-free) Compliant Product
Available
|
 |
New Low Noise pHEMT Devices:
| |
Model |
Gate |
NF |
NF |
Ga @ |
Ga @ |
P-1dB |
|
|
|
Width / |
@12GHz |
@4GHz |
N.F |
N.F |
@ |
|
|
|
Length |
Typ |
Typ |
@12GHz |
@4GHz |
12GHz |
 |
S-Para |
|
|
|
Typ/Min |
Typ |
Typ |
 |
New |
um |
dB |
dB |
dB |
dB |
dBm |
|
|
MwT-LN180 |
180/.15 |
0.50 |
0.20 |
10 / -- |
14.5 |
16.0 |
|
|
MwT-LN240 |
240/.15 |
0.50 |
0.20 |
10 / -- |
13.0 |
16.0 |
|
|
MwT-LN300 |
300/.15 |
0.60 |
0.20 |
10 / -- |
13.0 |
16.0 |
|
|
MwT-LN600 |
600/.15 |
0.50 |
0.20 |
9 / 8 |
12.0 |
20.0 |
pHEMT MM-Wave Applications
and Power pHEMT Devices:
The following are AlGaAs/InGaAs heterojunction pHEMT
(Pseudomorphic High Electron Mobility Transistor) devices, best suited for mm-wave power
and gain applications.
| |
Model |
Package |
Gate |
Gate |
Gate |
Chip |
S.S. Gain |
N. F. |
Ga @ |
P-1dB |
IP3 |
Nominal |
Ideal |
| |
|
Available |
Width / |
Layout |
Drain |
Thick- |
@12GHz |
@12GHz |
N.F |
@ |
@ |
Chip |
Circuit |
| |
|
Sealed / |
Length |
Method |
Source |
ness |
Typ/Min |
Typ/Max |
@12GHz |
12GHz |
12GHz |
Size |
|
|
|
New
Product |
Hermetic |
|
|
Bond Pads |
& VIA Hole |
|
|
Typ/Min |
Typ/Min |
Typ |
|
|
|
|
S-Para |
|
um |
|
Qty |
mil, y/n |
dB |
dB |
dB |
dBm |
dBm |
um um |
|
|
|
MwT-PH4 |
70, 73 / 71 |
180/0.3 |
single stripe |
1, 1, 2 |
5, no |
11.0 / 10.0 |
1.2 |
13.0/12.0 |
20.0/18.0 |
- |
356 241 |
Osc & Amp |
|
|
MwT-PH5 |
- |
300/0.3 |
single stripe |
1, 1, 2 |
4, no |
18.0 / 15.0 |
2.0 / - |
12.0/ - |
20.0/18.0 |
- |
406 241 |
Power Amp |
| |
MwT-PH7
|
70, 73 / 71 |
250/0.3 |
single stripe |
2, 1, 2 |
4, no |
13.5 / 12.0 |
- |
- |
24.0/22.0 |
- |
356 241 |
Medium pow |
|
|
MwT-PH8 |
71 |
1200/0.3 |
Interdigit |
2, 2, 3 |
4, no |
10.0 / 9.0 |
- |
- |
30.0/29.0 |
- |
673 305 |
Medium pow |
| |
MwT-PH9
|
70, 73 / 71 |
750/0.3 |
Interdigit |
1, 1, 2 |
4, no |
10.0 / 9.0 |
- |
- |
27.0/26.0 |
- |
419 292 |
Power Amp |
| |
MwT-PH11 |
71 |
2400/0.3 |
Interdigit |
2, 2, 3 |
4, no |
9.0 / 7.0 |
- |
- |
32.0/30.0 |
42 |
775 343 |
Power Amp |
|
|
MwT-PH15 |
70, 73 / 71 |
630/0.3 |
single stripe |
3, 2, 5 |
4, no |
12.0 / 10.0 |
- |
- |
28.5/27.0 |
- |
775 241 |
Medium pow |
|
|
MwT-PH16 |
71 |
900/0.3 |
single stripe |
6, 2, 7 |
4, no |
11.5 / 10.0 |
- |
- |
30.0/28.5 |
- |
1067 241 |
Medium pow |
|
|
MwT-PH16A |
- |
1600/0.25 |
Interdigit |
4, 4, 5 |
4, no |
11.0 / 9.5 |
- |
- |
31.0 / 29.0 |
- |
1126 330 |
Medium pow |
High-Power, High-Linearity Applications:
Ideal for
commercial, military, hi-rel space applications.
| |
Model |
Package |
Gate |
Gate |
Gate |
Chip |
S.S. Gain |
N. F. |
Ga @ |
P-1dB |
IP3 |
Nominal |
Ideal |
| |
|
Available |
Width / |
Layout |
Drain |
Thick- |
@12GHz |
@12GHz |
N.F |
@ |
@ |
Chip |
Circuit |
| |
|
Sealed / |
Length |
Method |
Source |
ness |
Typ/Min |
Typ/Max |
@12GHz |
12GHz |
12GHz |
Size |
|
|
|
New
Product |
Hermetic |
|
|
Bond Pads |
& VIA Hole |
|
|
Typ/Min |
Typ/Min |
Typ |
|
|
|
|
S-Para |
|
um |
|
Qty |
mil, y/n |
dB |
dB |
dB |
dBm |
dBm |
um um |
|
|
|
MwT-11 |
71 |
2400/0.3 |
Interdigit |
2, 2, 3 |
4, no |
9.0 / 7.0 |
- |
- |
30.0/28.0 |
- |
775 343 |
Power Amp |
|
|
MwT-17Q3 |
QFN |
2400/0.8 |
Interdigit |
4, 4, 5 |
4, no |
18.0/16.0 (1) |
1.5 (1) |
- |
28.0/27.0 |
46 |
1130 279 |
Power Amp |
Broad-Band, Low Noise Figure:
Recommended for multi-octave applications where low
noise figure is the driving parameter.
The MwT-A9 was designed for applications where both
high gain and low noise figure are key specifications.
| |
Model |
Package |
Gate |
Gate |
Gate |
Chip |
S.S. Gain |
N. F. |
Ga @ |
P-1dB |
IP3 |
Nominal |
Ideal |
| |
|
Available |
Width / |
Layout |
Drain |
Thick- |
@12GHz |
@12GHz |
N.F |
@ |
@ |
Chip |
Circuit |
| |
|
Sealed / |
Length |
Method |
Source |
ness |
Typ/Min |
Typ/Max |
@12GHz |
12GHz |
12GHz |
Size |
|
|
|
New
Product |
Hermetic |
|
|
Bond Pads |
& VIA Hole |
|
|
Typ/Min |
Typ/Min |
Typ |
|
|
|
|
S-Para |
|
um |
|
Qty |
mil, y/n |
dB |
dB |
dB |
dBm |
dBm |
um um |
|
| |
MwT-4 |
70, 73 / NA |
180/0.3 |
single stripe |
1, 1, 2 |
5, no |
9.0 / 8.0 |
1.5 / 1.8 |
9.0 / 8.0 |
14.0/13.0 |
- |
356 241 |
Osc & Amp |
| |
MwT-7
Nonlinear
Model |
70, 73 / NA |
250/0.3 |
single stripe |
2, 2, 2 |
5, no |
10.5 / 10.0 |
2.0 / - |
8.0 / - |
20.0/18.0 |
- |
356 241 |
BA/SE Amp |
| |
MwT-LP7 |
70, 73 / NA |
250/0.3 |
single stripe |
2, 2, 2 |
5, no |
10.5 / 10.0 |
2.0 / - |
8.0 / - |
20.0/18.0 |
- |
356 241 |
Oscillator |
| |
MwT-A9 |
84, 70, 73 / 71 |
750/0.3 |
single stripe |
1, 1, 2 |
5, no |
9.5 / 8.5 |
1.8 / - |
6.5 / 6.0 |
25.5/23.0 |
- |
419 292 |
FB Amp |
| |
MwT-A989 |
sot89 |
750/0.5 |
Interdigit |
1, 1, 2 |
4, no |
17.0/15.0 (1) |
0.9 (1) |
- |
25.0/23.0 |
40 |
419 292 |
Power Amp |
|
|
MwT-A989SB |
sot89 |
750/0.5 |
Interdigit |
1, 1, 2 |
4, no |
17.0/15.0 (1) |
0.9 (1) |
- |
25.0/23.0 |
40 |
419 292 |
Power Amp |
Broad-Band, High Gain:
Recommended for multi-octave applications where
maximum gain is the driving parameter.
| |
Model |
Package |
Gate |
Gate |
Gate |
Chip |
S.S. Gain |
N. F. |
Ga @ |
P-1dB |
IP3 |
Nominal |
Ideal |
| |
|
Available |
Width / |
Layout |
Drain |
Thick- |
@12GHz |
@12GHz |
N.F |
@ |
@ |
Chip |
Circuit |
| |
|
Sealed / |
Length |
Method |
Source |
ness |
Typ/Min |
Typ/Max |
@12GHz |
12GHz |
12GHz |
Size |
|
|
|
New
Product |
Hermetic |
|
|
Bond Pads |
& VIA Hole |
|
|
Typ/Min |
Typ/Min |
Typ |
|
|
|
|
S-Para |
|
um |
|
Qty |
mil, y/n |
dB |
dB |
dB |
dBm |
dBm |
um um |
|
| |
MwT-1 |
70, 73 / 71 |
630/0.3 |
single stripe |
1, 1, 2 |
5, no |
10.0 / 9.0 |
2.0 / - |
7.0 / - |
24.0/23.0 |
- |
775 241 |
FB Amp |
| |
MwT-3 |
70, 73 / 71 |
300/0.3 |
single stripe |
1, 1, 2 |
5, no |
11.0 / 10.0 |
- / - |
- / - |
21.0/20.0 |
- |
406 241 |
BA Amp |
| |
MwT-5 |
NA / NA |
2300/0.3 |
dual gate |
3, 1, 2 |
5, no |
13.0 / 12.0 |
3.5 / - |
11.0 / - |
19.0/15.0 |
- |
406 241 |
Buffer Amp |
| |
MwT-7
Nonlinear
Model |
70, 73 / NA |
250/0.3 |
single stripe |
2, 2, 2 |
5, no |
10.5 / 10.0 |
2.0 / - |
8.0 / - |
20.0/18.0 |
- |
356 241 |
BA/SE Amp |
Broad-Band, Medium Power:
The following devices are recommended for
multi-octave applications where optimum power output is the driving parameter.
| |
Model |
Package |
Gate |
Gate |
Gate |
Chip |
S.S. Gain |
N. F. |
Ga @ |
P-1dB |
IP3 |
Nominal |
Ideal |
| |
|
Available |
Width / |
Layout |
Drain |
Thick- |
@12GHz |
@12GHz |
N.F |
@ |
@ |
Chip |
Circuit |
| |
|
Sealed / |
Length |
Method |
Source |
ness |
Typ/Min |
Typ/Max |
@12GHz |
12GHz |
12GHz |
Size |
|
|
|
New
Product |
Hermetic |
|
|
Bond Pads |
& VIA Hole |
|
|
Typ/Min |
Typ/Min |
Typ |
|
|
|
|
S-Para |
|
um |
|
Qty |
mil, y/n |
dB |
dB |
dB |
dBm |
dBm |
um um |
|
| |
MwT-1 |
70, 73 / 71 |
630/0.3 |
single stripe |
1, 1, 2 |
5, no |
10.0 / 9.0 |
2.0 / - |
7.0 / - |
24.0/23.0 |
- |
775 241 |
FB Amp |
| |
MwT-2 |
70, 73 / 71 |
630/0.3 |
single stripe |
2, 2, 3 |
5, no |
8.5 / 8.0 |
- / - |
- / - |
24.5/23.0 |
- |
775 241 |
BA Amp |
| |
MwT-3 |
70, 73 / 71 |
300/0.3 |
single stripe |
1, 1, 2 |
5, no |
11.0 / 10.0 |
- / - |
- / - |
21.0/20.0 |
- |
406 241 |
BA Amp |
| |
MwT-6 |
- / 71 |
900/0.3 |
Interdigit |
2, 2, 3 |
5, no |
8.0 / 7.5 |
- / - |
- / - |
27.0/26.0 |
- |
559 292 |
FB/DA Amp |
| |
MwT-7
Nonlinear
Model |
70, 73 / NA |
250/0.3 |
single stripe |
2, 2, 2 |
5, no |
10.5 / 10.0 |
2.0 / - |
8.0 / - |
20.0/18.0 |
- |
356 241 |
BA/SE Amp |
| |
MwT-8 |
71 |
2400/0.3 |
Interdigit |
2, 2, 3 |
4, no |
7.5 / 7.0 |
- |
- |
28.0/27.0 |
- |
673 305 |
Power Amp |
| |
MwT-9 |
70, 73 / 71 |
750/0.3 |
Interdigit |
1, 1, 2 |
5, no |
9.0 / 8.0 |
- / - |
- / - |
26.0/25.0 |
- |
419 292 |
FB Amp |
| |
MwT-15 |
- / - |
630/0.3 |
single stripe |
4, 2, 5 |
5, no |
9.5 / 8.5 |
- / - |
- / - |
25.0/23.0 |
- |
775 241 |
Amplifier |
| |
MwT-16 |
- / - |
900/0.3 |
single stripe |
6, 2, 7 |
5, no |
8.5 / 7.5 |
- / - |
- / - |
27.0/26.0 |
- |
1067 241 |
BA Amp |
| |
MwT-17
Nonlinear
Model |
89 / 71 |
2400/0.8 |
Interdigit |
4, 4, 5 |
5, no |
7.0 / 6.0 |
(2) |
- |
29.5/28.5 |
45/- |
1130 279 |
BA/FB Amp |
| |
MwT-1789HL |
sot89 |
2400/0.8 |
Interdigit |
4, 4, 5 |
4, no |
-- |
(3) |
14.0 (1) |
28.0 |
46 |
1130 279 |
High Linearity |
| |
MwT-1789LN |
sot89 |
2400/0.8 |
Interdigit |
4, 4, 5 |
4, no |
-- |
(4) |
16.0 (1) |
28.0 |
46 |
1130 279 |
Low Noise |
| |
MwT-1789SB |
sot89 |
2400/0.8 |
Interdigit |
4, 4, 5 |
4, no |
-- |
(3) |
18.0 (1) |
28.0 |
44 |
1130 279 |
Power Amp |
Narrow-Band Power Applications:
Recommended for narrow-band applications where
maximum power output and gain are the driving parameters. These devices can be
biased at 5 volts for wireless communications applications.
| |
Model |
Package |
Gate |
Gate |
Gate |
Chip |
S.S. Gain |
N. F. |
Ga @ |
P-1dB |
IP3 |
Nominal |
Ideal |
| |
|
Available |
Width / |
Layout |
Drain |
Thick- |
@12GHz |
@12GHz |
N.F |
@ |
@ |
Chip |
Circuit |
| |
|
Sealed / |
Length |
Method |
Source |
ness |
Typ/Min |
Typ/Max |
@12GHz |
12GHz |
12GHz |
Size |
|
|
|
New
Product |
Hermetic |
|
|
Bond Pads |
& VIA Hole |
|
|
Typ/Min |
Typ/Min |
Typ |
|
|
|
|
S-Para |
|
um |
|
Qty |
mil, y/n |
dB |
dB |
dB |
dBm |
dBm |
um um |
|
| |
MwT-2 |
70, 73 / 71 |
630/0.3 |
single stripe |
2, 2, 3 |
5, no |
8.5 / 8.0 |
- / - |
- / - |
24.5/23.0 |
- |
775 241 |
BA Amp |
| |
MwT-3 |
70, 73 / 71 |
300/0.3 |
single stripe |
1, 1, 2 |
5, no |
11.0 / 10.0 |
- / - |
- / - |
21.0/20.0 |
- |
406 241 |
BA Amp |
| |
MwT-6 |
- / 71 |
900/0.3 |
Interdigit |
2, 2, 3 |
5, no |
8.0 / 7.5 |
- / - |
- / - |
27.0/26.0 |
- |
559 292 |
FB/DA Amp |
| |
MwT-8 |
71 |
2400/0.3 |
Interdigit |
2, 2, 3 |
4, no |
7.5 / 7.0 |
- |
- |
28.0/27.0 |
- |
673 305 |
Power Amp |
| |
MwT-9 |
70, 73 / 71 |
750/0.3 |
Interdigit |
1, 1, 2 |
5, no |
9.0 / 8.0 |
- / - |
- / - |
26.0/25.0 |
- |
419 292 |
FB Amp |
| |
MwT-17
Nonlinear
Model |
89 / 71 |
2400/0.8 |
Interdigit |
4, 4, 5 |
5, no |
7.0 / 6.0 |
(2) |
- |
29.5/28.5 |
45/- |
1130 279 |
BA/FB Amp |
Narrow-Band, Low Noise Applications:
Recommended for narrow-band applications where low
noise and gain are the driving parameters. These devices can be biased at 5 volts
for wireless communications applications.
| |
Model |
Package |
Gate |
Gate |
Gate |
Chip |
S.S. Gain |
N. F. |
Ga @ |
P-1dB |
IP3 |
Nominal |
Ideal |
| |
|
Available |
Width / |
Layout |
Drain |
Thick- |
@12GHz |
@12GHz |
N.F |
@ |
@ |
Chip |
Circuit |
| |
|
Sealed / |
Length |
Method |
Source |
ness |
Typ/Min |
Typ/Max |
@12GHz |
12GHz |
12GHz |
Size |
|
|
|
New
Product |
Hermetic |
|
|
Bond Pads |
& VIA Hole |
|
|
Typ/Min |
Typ/Min |
Typ |
|
|
|
|
S-Para |
|
um |
|
Qty |
mil, y/n |
dB |
dB |
dB |
dBm |
dBm |
um um |
|
| |
MwT-1 |
70, 73 / 71 |
630/0.3 |
single stripe |
1, 1, 2 |
5, no |
10.0 / 9.0 |
2.0 / - |
7.0 / - |
24.0/23.0 |
- |
775 241 |
FB Amp |
| |
MwT-4 |
70, 73 / NA |
180/0.3 |
single stripe |
1, 1, 2 |
5, no |
9.0 / 8.0 |
1.5 / 1.8 |
9.0 / 8.0 |
14.0/13.0 |
- |
356 241 |
Osc & Amp |
| |
MwT-A9 |
84, 70, 73 / 71 |
750/0.3 |
single stripe |
1, 1, 2 |
5, no |
9.5 / 8.5 |
1.8 / - |
6.5 / 6.0 |
25.5/23.0 |
- |
419 292 |
FB Amp |
| |
MwT-A989 |
sot89 |
750/0.5 |
Interdigit |
1, 1, 2 |
4, no |
17.0/15.0 (1) |
0.9 (1) |
- |
25.0/23.0 |
40 |
419 292 |
Power Amp |
|
|
MwT-A989SB |
sot89 |
750/0.5 |
Interdigit |
1, 1, 2 |
4, no |
17.0/15.0 (1) |
0.9 (1) |
- |
25.0/23.0 |
40 |
419 292 |
Power Amp |
SB = Self-Biased (1) @ 2.0GHz,
(2) noise figure = 0.8dB @ 0.9Ghz, (3) noise figure = 3.0dB @ 2.0Ghz,
(4) noise figure = 1.3dB @ 2.0Ghz, (5) @ 4.0Ghz
(DC Properties Listed On Page 2)
|
