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MwT- 17

500 MHz-12 GHz
High Linearity, Low Noise GaAs FET

 



MwT-17 Nonlinear Model

image002.gif (2902 bytes) Note:
1.
MwT-17 is a linear MESFET with 0.8 uM refractory metal/gold gate length and 2400 uM gate width.  It outputs 1W linear power up to 12GHz and IP3 is typically 4.5 dBm.
2.
The models are based on one die in a typical wafer.  It is periodically updated to reflect a more current wafer.  Your results might be slightly different if you use a wafer that is not from the sample used.



                   DC PARAMETERS

SYMBOL

UNITS VALUE DESCRIPTION
VBI V 0.8 BUILD-IN GATE POTENTIAL
VBR V -12 GATE-DRAIN BREAKDOWN
N 1.22 GATE JUNCTION IDEALITY FACTOR
IS pA 8.0 GATE JUNCTION REVERSE SATURATION CURRENT



                  CURTICE-ETTENBERG MODEL

SYMBOL

UNITS VALUE DESCRIPTION
A0 A 0.5997 CUBIC FIT IDS EQUATION COEFFICIENT
A1 A/V 0.4394 CUBIC FIT IDS EQUATION COEFFICIENT
A2 A/(V*V) 0.0450 CUBIC FIT IDS EQUATION COEFFICIENT
A3 A/(V*V*V) 0.0000 CUBIC FIT IDS EQUATION COEFFICIENT
BETA 1/V 0.0231 COEFFICIENT FOR PINCH-OFF CHANGE WITH RESPECT TO VDS
GAMMA 1/V 1.074 HYPERBOLIC TANGENT FUNCTION PARAMETER
VDSO V 4.6818 VDS AT WHICH A0, A1, A2 AND A3 WERE EVALUATED
CGSO PF 4.0977 ZERO BIAS GATE-SOURCE CAPACITANCE
CGDO PF 0.2452 ZERO BIAS GATE DRAIN CAPACITANCE
VTO V -3.2360 PINCH-OFF VOLTAGE

            

             TRIQUINT MODEL
SYMBOL UNITS VALUE DESCRIPTION
ALPHA 1/V 1.358 SLOPE OF DRAIN CHARACTERISTIC IN THE LINEAR REGION
BETA A/(V*V) 0.295 TRANSCONDUCTANCE COEFFICIENT
GAMMA 0.086 SLOPE PARAMETER OF PINCH-OFF VOLTAGE
DELTA 1/(A*V) 0.042 SLOPE OF DRAIN CHARACTERISTIC IN THE SATURATED REGION
Q 1.403 POWER LAW PARAMETER
VTO V -1.473 PINCH-OFF VOLTAGE
CGSO PF 4.256 ZERO BIAS GATE-SOURCE CAPACITANCE
CDSO PF 0.263 ZERO BIAS GATE-DRAIN CAPACITANCE